EE Seminar: Codes for Endurance-Limited Memories
(The talk will be given in English)
Speaker: Dr. Michal Horovitz
CS, Tel-Hai College
Monday, October 28th, 2019
15:00 - 16:00
Room 011, Kitot Bldg., Faculty of Engineering
Codes for Endurance-Limited Memories
Abstract
Resistive memories, such as phase change memories and resistive random access memories have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility. However, their limited endurance is still a major drawback that has to be improved before they can be widely adapted in large-scale systems.
I will introduce a coding scheme, called Endurance-Limited Memories (ELM) codes, that increases the endurance of these memories by limiting the number of cell programming operations. An l-change t-write ELM code is a coding scheme that allows to write t messages into some n binary cells while guaranteeing that each cell is programmed at most t times.
I will define some models of these codes which depend upon whether the encoder and the decoder know on each write the number of times each cell was programmed, know only the memory state before the new data encoded, or even do not know anything.
I will present results regarding the capacity and maximum sum-rate of these models, as well as, introduce some constructions.
Joint work with Yeow Meng Chee, Alexander Vardy, Van Khu Vu, and Eitan Yaakobi.
Short Bio
Michal Horovitz is a Lecturer in the Department of Computer Science, Tel-Hai College, Israel and she is also a researcher in The Galilee Research Institute - Migal, Upper Galilee, Israel.
She received the Ph.D. degree from the Computer Science Department at the Technion - Israel Institute of Technology, in 2017. Her research interests include coding theory with applications to non-volatile memories, information theory, and combinatorics.
